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The Measurement of Doping Uniformity in Ion Implanted Wafers

  • J. Stephen
  • B. J. Smith
  • G. W. Hinder

Abstract

This paper describes the measurement of the uniformity of sheet resistance of ion implanted layers in silicon wafers. A four point probe method is used with automatic data collection and analysis. Variations of 1% in sheet resistance have been mapped. The method is very flexible as it does not involve complex wafer preparation. It also allows further thermal annealing treatment to be given to the wafer.

Keywords

Sheet Resistance Point Probe Threshold Voltage Shift Automatic Data Collection Doping Uniformity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • J. Stephen
    • 1
  • B. J. Smith
    • 1
  • G. W. Hinder
    • 1
  1. 1.Electronics and Applied Physics DivisionA.E.R.E.Harwell, Didcot, Oxon.UK

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