Ion-Implanted Profiles for High-Frequency (> 100 GHz) Impatt Diodes
Ion-implanted p(boron)- and n(arsenic)-type dopant profiles have been used in the fabrication of D-band double-drift-region (DDR) and single-drift-region (SDR) silicon IMPATT diodes for precise control of the impurity levels and dimensions of the space-charge and contact regions. Factors which influence the final diode designs are discussed. Continuous-wave output powers and conversion efficiencies obtained at 140 GHz are 80 mW and 2% for a DDR device and 140 mW with 2.8% for a complementary SDR didode.
KeywordsEpitaxial Layer Doping Profile Microwave Performance IMPATT Diode Abrupt Junction
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