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Enhanced Residual Disorder in Silicon from Recoil Implantation of Oxygen and Nitrogen by Arsenic Implants Through Dielectric Layers

  • T. W. Sigmon
  • W. K. Chu
  • H. Müller
  • J. W. Mayer

Abstract

Channeling effect measurements have been used to evaluate the enhanced residual disorder found in silicon after implantation of arsenic through thin oxide and nitride layers. The disorder is found to be a function of both the dielectric layer thickness and the arsenic dose. Measurements after anneal of the implants at 1000°C for 30 minutes indicate the amount of damage increases with As dose and dielectric layer thickness. Simulation of the “knock-on” implantation by oxygen or nitrogen implants allows the inference of the number of recoils as a function of As energy and layer thickness. For the case of a 480Å SiO2 layer and 1016 As/cm2 implanted at 200 keV approximately 4 × 10l5/cm2 forward oxygen recoil atoms are produced. In general the residual damage for equivalent nitride layers was found to be approximately one-half that measured for oxide implants. Erosion of the films due to sputtering by the As implantation indicated that the number of atoms sputtered away is equivalent to 30–50Å of SiO2 for a dose of 2 × 1016 As/cm2.

Keywords

Oxide Thickness Nitride Layer Nitride Film Residual Damage Dielectric Layer Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • T. W. Sigmon
    • 1
  • W. K. Chu
    • 2
  • H. Müller
    • 2
  • J. W. Mayer
    • 2
  1. 1.Hewlett-Packard LaboratoriesPalo AltoUSA
  2. 2.California Institute of TechnologyPasadenaUSA

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