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Negative and Anisotropic Magnetoresistance in Phosphorus Implanted Silicon

  • T. Itoh
  • M. Higashiura
  • H. Sato

Abstract

The galvanomagnetic effects in phosphorus implanted n-channel MOSFET’s and p-type silicon substrates were investigated. The transport phenomena in ion implanted MOSFET show the same tendency as unimplanted MOSFET to be related to the two-dimensional conduction except for increase in Hall mobility. The angular dependences of the magnetoresistance in phosphorus implanted p-type silicon substrates reflect the band structure of silicon at high annealing temperatures and for the light implantations. For heavy phosphorus implantations, the negative magnetoresistance is observed at 77 K and the angular dependences of the magnetoresistance are similar to those of n-channel MOSFET. This anomalous anisotropy of the magnetoresistance is found to be due to the spatial nonuniform distribution of the relaxation time.

Keywords

Angular Dependence Implantation Dose Junction Depth Negative Magnetoresistance Magnetic Field Parallel 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    F. Stern, Proc. 10th Int. Conf. Phys. Semiconductors, Cambridge, Mass., 1970, p. 451Google Scholar
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    M. R. MacPherson, Solid-State Electron. 15, 1319 (1972)ADSCrossRefGoogle Scholar
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    W. Sasaki, J. Phys. Soc. Japan 12, Suppl. 543 (1966)Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • T. Itoh
    • 1
  • M. Higashiura
    • 1
  • H. Sato
    • 1
  1. 1.School of Science and EngineeringWaseda UniversityShinjuku-ku, TokyoJapan

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