The Effect of Proton Bombardment on Porous Silicon Formation
Influence of proton implantation for anodization of silicon in hydrofluoric acid has been investigated. This porous silicon can be used to form isolation layers for bipolar integrated circuits. Both p-and n-type silicon were used for the evaluation of proton implantation effects. Most implantations were carried out with 60–150 KeV beam of protons, at a total dose of 1013–1016/cm2 and at room temperature. In the case of implantation in n-type silicon, enhancement in anodization was observed at proton doses ranging from 1015 to 1016/cm2, i.e., the implanted region was converted into porous silicon, while the unimplanted region remained unchanged. On the other hand, in p-type samples, anodization was observed in the implanted region. The mechanism of this phenomenon was investigated by heat treatment after proton implantation.
KeywordsPorous Silicon Deep Trap Porous Silicon Layer Proton Dose Proton Implantation
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