Ion Implantation into Polycrystalline Silicon
Some aspects of cencentration profiles and annealing behaviors of boron implanted in the polycrystalline silicon films have been studied in comparison with that implanted in single crystalline silicon.
The implantation of boron into the polycrystalline silicon definitely exhibited more skew in the concentration profiles than that in single crystalline silicon substrates. The location of peak concentration (Rp)was in good agreement for both single and polycrystalline silicon.
Annealing behaviors and apparent diffusion coefficients of boron were markedly affected by the crystalline states of the polycrystalline silicon films.
KeywordsApparent Diffusion Coefficient Boron Atom Boron Concentration Hall Mobility Polycrystalline Silicon
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