Chemical Composition of High Dose Implants in Silicon and Germanium
High doses of various ion species have been implanted into single crystals of silicon and germanium at energies corresponding to projected ranges of about 200Å, in order to produce binary systems of varying fractional concentration. Backscattering analysis and secondary ion mass spectrometry have been applied to measure amount and distribution of the implanted ions with a precision of a few 10 Å.
KeywordsDepth Scale Backscattering Analysis High Saturation Level Gold Backing Increase Implantation Dose
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