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Chemical Composition of High Dose Implants in Silicon and Germanium

  • H. Kräutle
  • A. Feuerstein
  • H. Grahmann
  • S. Kalbitzer
  • F. Hasselbach
  • M. Prager

Abstract

High doses of various ion species have been implanted into single crystals of silicon and germanium at energies corresponding to projected ranges of about 200Å, in order to produce binary systems of varying fractional concentration. Backscattering analysis and secondary ion mass spectrometry have been applied to measure amount and distribution of the implanted ions with a precision of a few 10 Å.

Keywords

Depth Scale Backscattering Analysis High Saturation Level Gold Backing Increase Implantation Dose 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1).
    See e.g.: Ion implantation in semiconductors and other materials, Proc. III. Int. Conf. at Yorktown Heights 1972, Plenum Press 1973, B.L. Crowder (Editor)Google Scholar
  2. 2).
    H. Kräutle and S. Kalbitzer, in ref. 1,pp.585–594Google Scholar
  3. 3).
    K.H. Gaukler, Quantitative analysis with electron microprobes and secondary ion mass spectrometry, Conference at Jülich (Germany) 1972, pp. 279–304Google Scholar
  4. 4).
    A. van Wijngaarden, B. Miremadi and W.E. Baylis, Can.J.Phys. 49 (1971) 2440ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • H. Kräutle
    • 1
  • A. Feuerstein
    • 1
  • H. Grahmann
    • 1
  • S. Kalbitzer
    • 1
  • F. Hasselbach
    • 2
  • M. Prager
    • 2
  1. 1.Max-Planck-Institut für KernphysikHeidelbergGermany
  2. 2.Institut für Angewandte PhysikUniversität TübingenGermany

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