Control of Secondary Defects by Tin Diffusion in Ion Implanted Silicon Crystals
We have found that the generation of the secondary defects and the ionization ratio of the implanted ions in the ion implanted layers were affected by tin atoms present prior to the implantation. This paper reports the electrical properties and the electron microscopic observation of the secondary defects in the boron implanted layers.
KeywordsCarrier Concentration Strain Field Dislocation Loop Silicon Crystal Phosphorus Atom
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- 1.A.P. Karatsyuba, V. I. Kurinny, S. V. Rychkova, Y. P. Timashova and V. V. Yudin, Proceeding of the international Conference on Defect in Semiconductor, Reading, (1972) p. 81Google Scholar
- 2.R. W. Bicknell and R. M. Allen; “Ion Implantation” edited by F. H. Eisen and L. T Chadderton (Gordon and Breach, 1971)Google Scholar
- 3.M. Tamura, T. I keda and N. Yoshihiro, Japan. J. appl. Phys., 40, 9 (1971Google Scholar
- 4.R. S. Nelson Proceeding of the International Conference on Defect in Semiconductor, Reading (1972) p. 140Google Scholar
- 5.Y. Yukimoto, G. Nakamura, Y. Watari, K. Horie and Y. Akasaka, “Semiconductor Silicon” edited by Howard R. Huff and Ronald R. Burgess (The Electrochem. Soc. Inc., New York 1973)p. 692Google Scholar