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Control of Secondary Defects by Tin Diffusion in Ion Implanted Silicon Crystals

  • G. Nakamura
  • Y. Yukimoto
  • Y. Hirose

Abstract

We have found that the generation of the secondary defects and the ionization ratio of the implanted ions in the ion implanted layers were affected by tin atoms present prior to the implantation. This paper reports the electrical properties and the electron microscopic observation of the secondary defects in the boron implanted layers.

Keywords

Carrier Concentration Strain Field Dislocation Loop Silicon Crystal Phosphorus Atom 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • G. Nakamura
    • 1
  • Y. Yukimoto
    • 1
  • Y. Hirose
    • 1
  1. 1.Kitaitami WorksMitsubishi Electric CorporationItami, HyogoJapan

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