Control of Secondary Defects by Tin Diffusion in Ion Implanted Silicon Crystals

  • G. Nakamura
  • Y. Yukimoto
  • Y. Hirose


We have found that the generation of the secondary defects and the ionization ratio of the implanted ions in the ion implanted layers were affected by tin atoms present prior to the implantation. This paper reports the electrical properties and the electron microscopic observation of the secondary defects in the boron implanted layers.


Carrier Concentration Strain Field Dislocation Loop Silicon Crystal Phosphorus Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    A.P. Karatsyuba, V. I. Kurinny, S. V. Rychkova, Y. P. Timashova and V. V. Yudin, Proceeding of the international Conference on Defect in Semiconductor, Reading, (1972) p. 81Google Scholar
  2. 2.
    R. W. Bicknell and R. M. Allen; “Ion Implantation” edited by F. H. Eisen and L. T Chadderton (Gordon and Breach, 1971)Google Scholar
  3. 3.
    M. Tamura, T. I keda and N. Yoshihiro, Japan. J. appl. Phys., 40, 9 (1971Google Scholar
  4. 4.
    R. S. Nelson Proceeding of the International Conference on Defect in Semiconductor, Reading (1972) p. 140Google Scholar
  5. 5.
    Y. Yukimoto, G. Nakamura, Y. Watari, K. Horie and Y. Akasaka, “Semiconductor Silicon” edited by Howard R. Huff and Ronald R. Burgess (The Electrochem. Soc. Inc., New York 1973)p. 692Google Scholar
  6. 6.
    M. F. Ashby and L. M. Brown, Phil. Mag., 8, 1649 (1963)ADSCrossRefGoogle Scholar
  7. 7.
    J. M. Mitchell, J. appl. Phys., 33, 406 (1962)ADSCrossRefGoogle Scholar
  8. 8.
    H. Ryssel, H. Muller and K. Schmid, Appl. Phys., 3, 321 (1974)ADSCrossRefGoogle Scholar
  9. 9.
    R. A. Swalin, J. Phys. Chem. Solids, 18,290 (1961)ADSCrossRefGoogle Scholar
  10. 10.
    Joseph C., C. Tsai, Proceeding of IEEE, 57, 1499 (1969)CrossRefGoogle Scholar
  11. 11.
    T.H. Yeh, S. H. Hu and R. H. Kastel, J. appl. Phys., 39, 4266 (1968)ADSCrossRefGoogle Scholar
  12. 11a.
    T. H. Yeh and M. L. Joshi, J. Electrochem. Soc., 116, 73 (1969)CrossRefGoogle Scholar
  13. 12.
    R. Gereth, P. G. G. Van Loon, and W. Williams: J. Electrochem. Soc., 112, 323 (1965)CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • G. Nakamura
    • 1
  • Y. Yukimoto
    • 1
  • Y. Hirose
    • 1
  1. 1.Kitaitami WorksMitsubishi Electric CorporationItami, HyogoJapan

Personalised recommendations