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High Dose Phosphorus-Germanium Double Implantation in Silicon

  • N. Yoshihiro
  • M. Tamura
  • T. Tokuyama

Abstract

The formation of the dislocation networks in the well annealed high dose phosphorus implanted silicon can be suppressed if phosphorus-germanium double implantation is applied. The dose of germanium less than a half of that of phosphorus is required. A wet oxidation at about 800°C before high temperature anneal enhances the effect.

Keywords

High Temperature Anneal Edge Dislocation Thin Solid Line Dislocation Network Dopant Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • N. Yoshihiro
    • 1
  • M. Tamura
    • 1
  • T. Tokuyama
    • 1
  1. 1.Central Research LaboratoryHitachi, Ltd.Kokubunji, TokyoJapan

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