High Dose Phosphorus-Germanium Double Implantation in Silicon

  • N. Yoshihiro
  • M. Tamura
  • T. Tokuyama


The formation of the dislocation networks in the well annealed high dose phosphorus implanted silicon can be suppressed if phosphorus-germanium double implantation is applied. The dose of germanium less than a half of that of phosphorus is required. A wet oxidation at about 800°C before high temperature anneal enhances the effect.


High Temperature Anneal Edge Dislocation Thin Solid Line Dislocation Network Dopant Atom 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • N. Yoshihiro
    • 1
  • M. Tamura
    • 1
  • T. Tokuyama
    • 1
  1. 1.Central Research LaboratoryHitachi, Ltd.Kokubunji, TokyoJapan

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