Abstract
The formation of the dislocation networks in the well annealed high dose phosphorus implanted silicon can be suppressed if phosphorus-germanium double implantation is applied. The dose of germanium less than a half of that of phosphorus is required. A wet oxidation at about 800°C before high temperature anneal enhances the effect.
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References
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© 1975 Plenum Press, New York
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Yoshihiro, N., Tamura, M., Tokuyama, T. (1975). High Dose Phosphorus-Germanium Double Implantation in Silicon. In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_71
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DOI: https://doi.org/10.1007/978-1-4684-2151-4_71
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-2153-8
Online ISBN: 978-1-4684-2151-4
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