Recovery of Silicon Layers Damaged by Low Energy Ion Bombardment
Silicon has been implanted at room temperature with silicon and xenon ions to introduce lattice disorder up to the amorphous level. Annealing characteristics have been measured as a function of implanted dose. This data was analyzed with a defect model relating annealing temperature to cluster size.
Elements with masses close to silicon and xenon, respectively, have been implanted in order to search for chemical effects on the annealing behavior of damaged silicon.
KeywordsSilicon Layer Defect Cluster Annealing Behavior Thermal Recovery Annealing Characteristic
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