Advertisement

Recovery of Silicon Layers Damaged by Low Energy Ion Bombardment

  • R. Prisslinger
  • S. Kalbitzer
  • H. Kräutle
  • J. J. Grob
  • P. Siffert

Abstract

Silicon has been implanted at room temperature with silicon and xenon ions to introduce lattice disorder up to the amorphous level. Annealing characteristics have been measured as a function of implanted dose. This data was analyzed with a defect model relating annealing temperature to cluster size.

Elements with masses close to silicon and xenon, respectively, have been implanted in order to search for chemical effects on the annealing behavior of damaged silicon.

Keywords

Silicon Layer Defect Cluster Annealing Behavior Thermal Recovery Annealing Characteristic 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1).
    R.S. Nelson, Proc.Int.Conf. on Radiation Damage and Defects in Semiconductors, The Institute of Physics, London, p. 212Google Scholar
  2. 2).
    F.F. Morehead et al., Proc.I.Int. Conf. on Ion Implantation, Thousand Oaks May 1970, p. 25Google Scholar
  3. 3).
    E.C. Baranova et al., Rad.Effects 18 (1973) 21CrossRefGoogle Scholar
  4. 4).
    J.W. Mayer et al., Can.J.Phys. 46 (1968) 663ADSCrossRefGoogle Scholar
  5. 5).
    B.L. Crowder et al., Appl.Phys.Letters 16 (1970) 205ADSCrossRefGoogle Scholar
  6. 6).
    F. Morehead et al., J.Appl.Phys. 43 (1972) 1112ADSCrossRefGoogle Scholar
  7. 7).
    K.H. Eklund and A. Andersen, Proc.II.Int.Conf. on Ion Implantation, Garmisch-Partenkirchen May 1971, p. 103Google Scholar
  8. 8).
    M.D. Matthews, Rad. Effects 11 (1971) 167CrossRefGoogle Scholar
  9. 9).
    H.J. Stein et al., see ref.2, p. 17Google Scholar
  10. 10).
    S.H. Davidson, Proc. European Conf. on Ion Implantation, Reading Sept. 1970, p.238Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • R. Prisslinger
    • 1
  • S. Kalbitzer
    • 1
  • H. Kräutle
    • 1
  • J. J. Grob
    • 2
  • P. Siffert
    • 2
  1. 1.Max-Planck-Institut für KernphysikHeidelbergGermany
  2. 2.CRN StrasbourgFrance

Personalised recommendations