ESR Studies of Ion Implanted Si-SiO2 Structure
Electron spin resonance spectra of radiation damage centers (named Pa, Pb and Pc center) in Si-SiO2 structure have been observed following implantation with Ne+ and O+ ions. Pa and Pc centers with g-values of 2.0013 and 2.008, respectively, located in SiO2 films and Pb with g-value of 2.006 is located in silicon. Pa center is maximum density at about 0.9Rp (projected range) in the Si02 films. The peak of spin density shifts towards the surface with elevating annealing temperature and disappeared at 400°C. The activation energy for the process is ~0.2eV in the range of 100°C – 350°C. Properties of Pb center are similar to those from the amorphous region in implanted silicon. Pc center is an asymmetric broad line, which has the maximum spin density in the deeper layer than Rp. The g-values of Pa and Pc center in the SiO2 suggest that Pa is an electron resonance and Pc a hole.
KeywordsElectron Spin Resonance Electron Spin Resonance Spectrum Paramagnetic Center Si02 Film Irradiate Glass
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- T. Tokuyama, Proc. 5th Conf. of Solid State Devices, Tokyo 1973, p. 499.Google Scholar
- T. Tokuyama, et al, 3rd Intern. Conf. Ion Implantation in Semicond. and Other Materials, (1973), p. 159.Google Scholar
- T. Matsumori, et al, Proc. 3rd Intern. Conf. Ion Implantation in Semicond. and Other Materials, (1973), p. 33.Google Scholar
- S. Lee and P. J. Bray, Phys. and Chemi. Glasses, 3, 37 (1962).Google Scholar
- T. Warabisako, et al, Ohyo Butsuri, 42, 174 (1974) (in Japanese)Google Scholar
- Y. Nishi, Japan J. Appl. Phys. 10, 52 (1971).Google Scholar