ESR Studies on Annealing Behavior of Heavily Damaged Silicon
We have studied the influence of an isochronal annealing process on paramagnetic defect centers produced by implanting 1•1014P+/cm2 and 1•1015P+/cm2 in Si at room temperature with an energy of 200keV. For the intermediate dose implant(1•1014/cm2) four types of defect centers have “been observed which revealed a complicated annealing behaviour. In addition other defect centers appeared at different temperature stages during the annealing process and some centers were found to be stable up to 600°C. For the high dose implant (1•1015/cm2) only the amorphous-center(g=2.006) has been observed and was found to anneal out above 500°C. No other defect centers appeared in this temperature range, in contrast to the results from the intermediate dose implant. In both dose ranges, ESR spectrum of implanted phosphorus donors was observed for temperature above 500°C. We also discuss the annealing behavior of both the paramagnetic susceptibility and the line width of conduction electrons from phosphorus donor atoms.
KeywordsLine Width Conduction Electron Increase Annealing Temperature Defect Center Isochronal Annealing
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