An EPR Study on High Energy Ion Implanted Silicon
EPR is used to study the lattice disorder produced by the C+ and N+ implantation in silicon in the high-energy range 0.55–3.50 Mev. Two new EPR spectra, Si-Al2 (anisotropic) and -Al3 (isotropic) are resolved for E > 1.65 Mev. Isochronal annealing shows that the amorphous line does not completely anneal at 700°C. The depth of the amorphous layer is roughly proportional to E1/2 in the high-energy range.
KeywordsAmorphous State Amorphous Layer Isochronal Annealing Intrinsic Silicon Total Spin Density
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- 3.K. Masuda, S. Namba, K. Gamo and K. Murakami, in Ion Implantation in Semiconductors, S. Namba, Ed., Soc. for Promotion of Sei., Japan (1972), p. 19.Google Scholar
- 4.G. H. Schwuttke, K. Brack, E. E. Gardner and H. M. DeAngelis, in Radiation Effects in Semiconductors, F. L. Vook, Ed., Plenum Press, New York (1968), p. 406.Google Scholar
- 6.D. K. Brice, Sandia Report (SLA-73–0416), (1973).Google Scholar