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An EPR Study on High Energy Ion Implanted Silicon

  • Y. H. Lee
  • P. R. Brosious
  • L. J. Cheng
  • J. W. Corbett

Abstract

EPR is used to study the lattice disorder produced by the C+ and N+ implantation in silicon in the high-energy range 0.55–3.50 Mev. Two new EPR spectra, Si-Al2 (anisotropic) and -Al3 (isotropic) are resolved for E > 1.65 Mev. Isochronal annealing shows that the amorphous line does not completely anneal at 700°C. The depth of the amorphous layer is roughly proportional to E1/2 in the high-energy range.

Keywords

Amorphous State Amorphous Layer Isochronal Annealing Intrinsic Silicon Total Spin Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • Y. H. Lee
    • 1
  • P. R. Brosious
    • 1
  • L. J. Cheng
    • 1
  • J. W. Corbett
    • 1
  1. 1.Department of PhysicsState University of New York at AlbanyAlbanyUSA

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