Displacement Damage in Ne Implanted Magnesium Oxide
Displacement damage profiles measured for 1-to-4. 8 MeV Ne implantation of MgO agree with LSS energy deposition profiles for doses near 10 cm” . For higher doses, damage profiles appear to penetrate further than anticipated on the basis of LSS. Below 3x10 cm” , for room temperature implants, approximately 100 stable F centers are formed per incident 3 MeV Ne . This defect formation efficiency quickly decreases for high dose, falling to 0.1 per Ne+ by 1017 cm-2 . Following F -center anneal at 600°C, a large deformation related band at 5. 8 eV remains, the intensity of which suggests massive deformation and plastic flow within and near the damage layer. Such plastic flow, releaving stress built-up by high-dose implantation, may be related to the distorted damage profiles.
KeywordsFlow Stress Plastic Flow Anion Vacancy Massive Deformation Damage Layer
Unable to display preview. Download preview PDF.
- 1.A. E. Hughes and B. Henderson, in Point Defects in Solids, ed. by J.W. Crawford, Jr. and L.M. Slifkin (Plenum, New York, 1972).Google Scholar
- 4.J. Lindhard, M. Scharff, and H.E. Schiott, K. Dan. Vidensk. Selsk. Mat.-Fys. Medd. 33, No. 14 (1963).Google Scholar
- 7.Y. Chen, D. L. Trueblood, O.E. Schow and H. T. Tohver, J. Phys. C3, 85 (1974).Google Scholar
- 9.J. C. Bourgoin and J. W. Corbett, Phys. Letters A38, (1973).Google Scholar