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Displacement Damage in Ne Implanted Magnesium Oxide

  • B. D. Evans

Abstract

Displacement damage profiles measured for 1-to-4. 8 MeV Ne implantation of MgO agree with LSS energy deposition profiles for doses near 10 cm” . For higher doses, damage profiles appear to penetrate further than anticipated on the basis of LSS. Below 3x10 cm” , for room temperature implants, approximately 100 stable F centers are formed per incident 3 MeV Ne . This defect formation efficiency quickly decreases for high dose, falling to 0.1 per Ne+ by 1017 cm-2 . Following F -center anneal at 600°C, a large deformation related band at 5. 8 eV remains, the intensity of which suggests massive deformation and plastic flow within and near the damage layer. Such plastic flow, releaving stress built-up by high-dose implantation, may be related to the distorted damage profiles.

Keywords

Flow Stress Plastic Flow Anion Vacancy Massive Deformation Damage Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • B. D. Evans
    • 1
  1. 1.Naval Research LaboratoryUSA

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