Damage Production and Annealing in Implanted Silicon as Studied by Optical Reflectivity Profiling
An optical reflectivity technique was devised to investigate ion implanted damage profiles and their annealing behavior. A set of damage profiles for 400 keV implanted 75As+ was obtained. The results are in good general agreement with theoretical approximations. The anomalous excess damage layer induced by the thru-oxide arsenic implantation was briefly studied.
KeywordsAmorphous Layer Optical Reflectivity Annealing Behavior Damage Production Damage Profile
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