Damage Production and Annealing in Implanted Silicon as Studied by Optical Reflectivity Profiling

  • E. T. Yen
  • B. J. Masters
  • R. Kastl


An optical reflectivity technique was devised to investigate ion implanted damage profiles and their annealing behavior. A set of damage profiles for 400 keV implanted 75As+ was obtained. The results are in good general agreement with theoretical approximations. The anomalous excess damage layer induced by the thru-oxide arsenic implantation was briefly studied.


Amorphous Layer Optical Reflectivity Annealing Behavior Damage Production Damage Profile 


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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • E. T. Yen
    • 1
  • B. J. Masters
    • 1
  • R. Kastl
    • 1
  1. 1.BM System Products DivisionHopewell JunctionUSA

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