Damage Production and Annealing in Implanted Silicon as Studied by Optical Reflectivity Profiling

  • E. T. Yen
  • B. J. Masters
  • R. Kastl


An optical reflectivity technique was devised to investigate ion implanted damage profiles and their annealing behavior. A set of damage profiles for 400 keV implanted 75As+ was obtained. The results are in good general agreement with theoretical approximations. The anomalous excess damage layer induced by the thru-oxide arsenic implantation was briefly studied.


Amorphous Layer Optical Reflectivity Annealing Behavior Damage Production Damage Profile 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    S. M. Davidson and G. R. Booker, Proc. IEEE, pp. 51–61, Sept. 1972.Google Scholar
  2. 2.
    B. J. Masters, J. M. Fairfield and B. L. Crowder, Proc. 1st. Int. Conf. on Ion Implantation, New York: Gordon and Breach, pp. 81–87, 1971.Google Scholar
  3. 3.
    J. W. Mayer, L. Eriksson, S. T. Picraux and J. A. Davis, Can. J. Phys. 46 663 (1968).ADSCrossRefGoogle Scholar
  4. 4.
    S. Kurtin, G. A. Shifrin and T. C. McGill, Appl. Phys. Letters 14 223 (1969).ADSCrossRefGoogle Scholar
  5. 5.
    R. R. Hart and O. J. Marsh, Appl. Phys. Letters 14 225 (1969).ADSCrossRefGoogle Scholar
  6. 6.
    T. C. McGill, S. L. Kurtin and G. A. Shifrin, J. Appl. Physics 41 246 (1970).ADSCrossRefGoogle Scholar
  7. 7.
    D. D. Sell and A. U. MacRae, J. Appl. Physics 414929 (1970).ADSCrossRefGoogle Scholar
  8. 8.
    H. J. Stein, F. L. Vook, D. K. Brice, J. A. Borders and S. T. Picraux, Proc. 1st. Int. Conf. on Ion Implantation, New York: Gordon and Breach, pp. 17–24, 1971.Google Scholar
  9. 9.
    E. C. Baranova, V. M. Gusev, Yu V. Martynenko, C. V. Starinin and I. B. Hailbullin, Ion Implantation in Semiconductor and Other Materials, B. L. Crowder, Ed., Plenum, pp. 59–71, 1973.Google Scholar
  10. 10.
    J. G. DeWitt and C. A. J. Ammerlan, Proc. 2nd Int. Conf. on Ion Implantation, I. Ruge and J. Graul, Eds., New York: Springer, pp. 39–46, 1971.Google Scholar
  11. 11.
    J. E. Smith, Jr., M. H. Brodsky, B. L. Crowder and M. L. Nathan, Phys. Rev. Letters 26 642 (1971).ADSCrossRefGoogle Scholar
  12. 12.
    M. M. Ibrahim and N. M. Bashara, Surface Science 30 632 (1972).ADSCrossRefGoogle Scholar
  13. 13.
    W. C. Dash and R. Newman, Phys. Review 15 1151 (1955).ADSCrossRefGoogle Scholar
  14. 14.
    H. P. Philipp and E. A. Taft, Phys. Review 120 37 (1960).ADSCrossRefGoogle Scholar
  15. 15.
    J. A. Davies, J. DenHartog, L. Eriksson and J. W. Mayer, Can. J. Phys. 45 4053 (1967).ADSCrossRefGoogle Scholar
  16. 16.
    P. Sigmund and J. B. Sanders, Proc. Int. Conf. on Applications of Ion Beams to Semiconductor Technology, P. Glotin, Ed., France, pp. 215–233, 1967.Google Scholar
  17. 17.
    S. Furukawa, H. Matsumura, H. Ishiwara, Proc. U.S.-Japan Sem. on Ion Implantation in Semiconductors, S. Namba, Ed. Kyoto, Japan, (1972).Google Scholar
  18. 18.
    W. S. Johnson, Technical Report No. K70z1–3, pp. 64–68, Stanford University, 1969.Google Scholar
  19. 19.
    T. R. Cass and V. G. K. Reddi, Appl. Phys. Letters 23 268 (1973).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • E. T. Yen
    • 1
  • B. J. Masters
    • 1
  • R. Kastl
    • 1
  1. 1.BM System Products DivisionHopewell JunctionUSA

Personalised recommendations