The Use of Molecular Ions for Implantation Studies in Si and Ge
Results of an investigation of the lattice disorder resulting from equal atom dose implants of molecular and atomic ions in Si and Ge are presented. In each case, the molecular ion implants had the same energy per atom and were performed at the same atomic flux and fluence as the atomic ion implants. With heavy ions (As, Sb, Te and Bi), the molecular beam produces roughly 50% more damage than the atomic beam, indicating that damage production depends not only on the amount but also on the localized concentration of deposited energy. Preliminary experiment with lighter ions (H, D) in both Si and Ge do not show this mole cub effect. The significance of these results is discussed in relation to the average energy density within the collision cascade.
KeywordsCollision Cascade Displace Atom Average Energy Density Damage Cluster Implantation Study
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