On the Determination of Defects Distribution in Implanted Layers by Means of Backscattering Technique

  • Noriaki Matsunami
  • Noriaki Itoh


The various methods of deriving the random fraction caused “by defects and of obtaining the depth profile of defects in Si are examined, such as the single scattering, multiple scattering, plural scattering and diffusion models. It is found that the diffusion model gives the appropriate result over the most wide range of defect concentration. Methods are suggested for deriving both the random fraction caused “by defects and the depth profile of defects experimentally.


Diffusion Model Depth Profile Multiple Scattering Defect Concentration Single Scattering 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • Noriaki Matsunami
    • 1
  • Noriaki Itoh
    • 1
  1. 1.Department of Nuclear Engineering, Nagoya, JapanChikusa-ku, NagoyaJapan

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