On the Determination of Defects Distribution in Implanted Layers by Means of Backscattering Technique
The various methods of deriving the random fraction caused “by defects and of obtaining the depth profile of defects in Si are examined, such as the single scattering, multiple scattering, plural scattering and diffusion models. It is found that the diffusion model gives the appropriate result over the most wide range of defect concentration. Methods are suggested for deriving both the random fraction caused “by defects and the depth profile of defects experimentally.
KeywordsDiffusion Model Depth Profile Multiple Scattering Defect Concentration Single Scattering
Unable to display preview. Download preview PDF.
- 1.J. W. Mayer, L. Eriksson and J. A. Davies, Ion Implantation in Semiconductors, (Academic Press, New York, 1970).Google Scholar
- 2.E. Bøgh, Canadian J. Phys. 46, 653 (1968).Google Scholar
- 3.J. E. Westmoreland, J. W. Mayer, F. H. Eisen and B. Welch, Radiation Effects 6, l6l (1970).Google Scholar
- 7.F. H. Eisen, B. Welch, J. E. Westmoreland and J. W. Mayer, Atomic Collision Phenomena in Solids (North-Holland, Amsterdam, 1970) p.111Google Scholar
- 8.N. Matsunami, to be published. see also N. Matsunami and N. Itoh, Proceeding of the International Conference on Atomic Collisions in Solids (Gatlinburg, 1973).Google Scholar