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Backscattering and ESR Studies in Heavily Damaged Layer

  • Kohzoh Masuda

Abstract

Two important technologies (Backscattering and ESR) in measurements of physical properties in implanted material are noticed as complementary technologies.

A typical feature of ESR of the amorphous centers is described and inhomogeneous character which was found recently by microwave frequency dependence at low temperature in spin system is mentioned.

Keywords

Line Width Spin System Unpaired Electron Amorphous Layer Implantation Dose 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

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    F.F. Morehead and B.L. Crowder: J.A.P. 43 (1972) 1112.Google Scholar
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    N.F. Mott and E.A. Davis: Electronic Processes in Non-Crystalline Materials, Clarendon Press, Oxford, 1971. p.199.Google Scholar
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    J.W. Mayer, L. Ericksson, S.T. Picraux and J.A. Davies; Can. J. Phys. 46 (1968) 663.ADSCrossRefGoogle Scholar
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    K. Murakami, K. Masuda, K. Gamo and S. Namba: J.J.A.P. 12 (1973) 1307.Google Scholar
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    G.D. Watkins and J.W. Corbett: Phys. Rev. 123 (1962) 1605.Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • Kohzoh Masuda
    • 1
  1. 1.Faculty of Engineering ScienceOsaka UniversityToyonaka, OsakaJapan

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