Backscattering and ESR Studies in Heavily Damaged Layer
Two important technologies (Backscattering and ESR) in measurements of physical properties in implanted material are noticed as complementary technologies.
A typical feature of ESR of the amorphous centers is described and inhomogeneous character which was found recently by microwave frequency dependence at low temperature in spin system is mentioned.
KeywordsLine Width Spin System Unpaired Electron Amorphous Layer Implantation Dose
- F.F. Morehead and B.L. Crowder: J.A.P. 43 (1972) 1112.Google Scholar
- N.F. Mott and E.A. Davis: Electronic Processes in Non-Crystalline Materials, Clarendon Press, Oxford, 1971. p.199.Google Scholar
- K. Murakami, K. Masuda, K. Gamo and S. Namba: J.J.A.P. 12 (1973) 1307.Google Scholar
- G.D. Watkins and J.W. Corbett: Phys. Rev. 123 (1962) 1605.Google Scholar