The Characterization of Implanted Layers Using the Conductivity Modulation Effect

  • M. J. Howes
  • D. V. Morgan
  • P. Ashburn


In this paper lue have considered in detail how the introduction of radiation damage centres into the depletion region of silicon p-n junctions effects the small signal terminal admittance of the diodes. The results are interpreted in terms of conductivity modulation arising from a trapping level 0.31eV above the conduction band which gives rise to a hole capture type recombination process. Damage profiles have been extracted from the forward bias capacitance voltage curves.


Depletion Region Forward Bias Bulk Region Conductivity Modulation Trapping Level 


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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • M. J. Howes
    • 1
  • D. V. Morgan
    • 1
  • P. Ashburn
    • 1
  1. 1.Electrical Engineering DepartmentLeeds UniversityLeedsEngland

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