Ternary Defects Resulting from the Implantation of B, F, BF, and BF2 Ions into Silicon, Their Formation and Effect Upon Device Properties

  • S. Prussin


Ions of B, F, BF and BF , implanted with fluences of 1014 and 1015 cm-2 , were subjected to several thermal treatments. Wet oxidation at 1100° C resulted in a heavy generation of ternary defects. Annealing in dry N2 at 1100° C prior to wet oxidation resulted in the effective solution of defect nuclei while annealing at 1000 C was only partially effective. N+P+ diodes, prepared by chemical phosphorus indiffusion were evaluated electrically. Diodes prepared from implanted surfaces which underwent the 1100° C dry N2 anneal exhibited low leakage under reverse bias. For the 1000° C anneal, only the BF2 implantation exhibited low leakage, the B and BF implantations resulting in leakages several orders of magnitude greater.


Reverse Bias Dislocation Loop Reverse Leakage Clear Background Base Drive 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    J.F. Gibbons, Proc. IEEE 9, 1062 (1972)CrossRefGoogle Scholar
  2. 2.
    Masao Tamura, Appl. Phys. Letters, 23, 651 (1973)ADSCrossRefGoogle Scholar
  3. 3.
    S. Prussin, J. Appl. Phys. 45, 1635 (1974)ADSCrossRefGoogle Scholar
  4. 4.
    S. Prussin, Spring Meeting, E.C.S. San Francisco May 1974, abstract no. 85 (submitted for publication, J.E.C.S.)Google Scholar
  5. 5.
    H. Müller, H. Ryssel, and I. Ruge, Proceedings of the Second International Conference on Ion Implantation in Semiconductors, edited by I. Ruge and J. Graul (Springer Verlag, New York, 1971)Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • S. Prussin
    • 1
  1. 1.TRW Semiconductors and TRW SystemsLawndaleUSA

Personalised recommendations