Ternary Defects Resulting from the Implantation of B, F, BF, and BF2 Ions into Silicon, Their Formation and Effect Upon Device Properties
Ions of B, F, BF and BF , implanted with fluences of 1014 and 1015 cm-2 , were subjected to several thermal treatments. Wet oxidation at 1100° C resulted in a heavy generation of ternary defects. Annealing in dry N2 at 1100° C prior to wet oxidation resulted in the effective solution of defect nuclei while annealing at 1000 C was only partially effective. N+P+ diodes, prepared by chemical phosphorus indiffusion were evaluated electrically. Diodes prepared from implanted surfaces which underwent the 1100° C dry N2 anneal exhibited low leakage under reverse bias. For the 1000° C anneal, only the BF2 implantation exhibited low leakage, the B and BF implantations resulting in leakages several orders of magnitude greater.
KeywordsReverse Bias Dislocation Loop Reverse Leakage Clear Background Base Drive
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