Defects in Ion Implanted SiO2 Layers on Si
The introduction rates and annealing behavior of structural defects created by ion implantation into or through thermally grown SiO2 layers on Si have been investigated by measuring the induced volume compaction of the SiO2- In contrast to conventional capacitance-voltage techniques, the present measurements produce information about the structural defects independent of the defect electrical state. Thus, defect annealing is monitored, not charge redistribution. The induced compaction was measured by monitoring the curvature of 1.5 cm × 0.25 cm × 0.025 cm oxidized Si samples introduced by implantation of Ar+, H+, and low energy electrons into one major surface. Curvature was determined in situ with a cantilever beam technique and after isochronal anneals with a Dec Tac instrument.