Abstract
The technique for calculating low order moments of the projected range distribution previously described by these authors [1] has been extended to allow calculation of intermediate range statistics. The results obtained show that at intermediate energies the skewing can be much larger than observed in the final range distribution. The effect of this skewing on energy deposited in atomic processes is computed by the two step method of Brice [2], from which it is found that computations including the skewing provide a substantially better fit for experimental data.
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References
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© 1975 Plenum Press, New York
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Mylroie, S.W., Gibbons, J.F. (1975). The Effects of Non-Gaussian Range Statistics on Energy Deposition Profiles. In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_52
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DOI: https://doi.org/10.1007/978-1-4684-2151-4_52
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-2153-8
Online ISBN: 978-1-4684-2151-4
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