Ion Implantation Through Surface Layers: A Truncated Gaussian Model
An analysis of the effects of surface layers, used to obtain modified ion-implanted profiles, is presented as an extension of the LSS-approach. The results obtained from the APL analysis, which combines a truncated Gaussian model with a simple iteration scheme, are in substantial agreement with Furukawa and Ishiwara’s quasi-Monte Carlo results as well as with the published experimental data. These findings are contrary to the previously published opinion that the LSS approach is not applicable to multi-layer implantation problems.
KeywordsGaussian Model Semiconductor Processing Boron Implantation Partial Mask Energy Thickness
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- 1.J. Lindhard, M. Scharff and H. E. Schiott, Kgl. Danske Videnskab., Mat.Fys.Medd.Dan.Vid.Selsk., 33, #14, 1963.Google Scholar
- 2.W. S. Johnson and J. F. Gibbons, “Projected Range Statistics in Semiconductors,” Stanford University Book Store, 1969.Google Scholar
- 5.International Symposium on Ion Implementation, Yorktown Heights, Dec. 11 through 14, 1972; unresolved problem of Rump Session.Google Scholar