Ion Implantation Through Surface Layers: A Truncated Gaussian Model

  • A. V. S. Satya
  • H. R. Palanki


An analysis of the effects of surface layers, used to obtain modified ion-implanted profiles, is presented as an extension of the LSS-approach. The results obtained from the APL analysis, which combines a truncated Gaussian model with a simple iteration scheme, are in substantial agreement with Furukawa and Ishiwara’s quasi-Monte Carlo results as well as with the published experimental data. These findings are contrary to the previously published opinion that the LSS approach is not applicable to multi-layer implantation problems.


Gaussian Model Semiconductor Processing Boron Implantation Partial Mask Energy Thickness 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • A. V. S. Satya
    • 1
  • H. R. Palanki
    • 1
  1. 1.IBM System Products DivisionHopewell JunctionUSA

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