A Rutherford Backscattering and Channelling Study of Dy Implanted Into Single Crystal Ni
Lattice disorder, atom location and implant migration during isochronal annealing of the 20keV Dy+ implanted Ni system have been examined by Rutherford backscattering and channelling techniques. Two annealing stages for the disorder are identified. The first between 300–600°C is associated with a reduction in the channelling disorder peak, the second corresponds with a sharp decrease in dechannelling rate between 650–800°C. High depth resolution back-scattering indicates that the lattice disorder anneals from the bulk towards the Ni surface and that marked outdiffusion of Dy to the Ni surface occurs above 600°C. The lattice location of Dy in Ni appears to be most sensitive to the implant conditions.
KeywordsDepth Resolution Rutherford Backscatter Isochronal Anneal Anneal Stage Lattice Disorder
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