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The Formation of Substitutional Alloys in fcc Metals by High Dose Implantations

  • J. M. Poate
  • W. J. DeBonte
  • W. M. Augustyniak
  • J. A. Borders

Abstract

The lattice location of Au implanted to high doses at room temperature into single crystal Ni, Cu, Pd and Ag has been determined using 4He ion channeling and backscattering. In all cases the Au atoms are found to be 100% substitutional for room temperature implants without annealing. Au implants in Cu at 15°K are found to be 100% substitutional. High dose implants of W in Cu, a reportedly insoluble impurity, are also found to be highly substitutional.

Keywords

Substitutional Alloy Insoluble Impurity Angular Scan High Dose Implantation Thermal Spike Model 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • J. M. Poate
    • 1
  • W. J. DeBonte
    • 1
  • W. M. Augustyniak
    • 1
  • J. A. Borders
    • 2
  1. 1.Bell LaboratoriesMurray HillUSA
  2. 2.Sandia LaboratoriesAlbuquerqueUSA

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