Ion Impact Chemistry in Thin Metal Films; Argon, Oxygen and Nitrogen Bombardment of Tantalum

  • K. H. Goh
  • K. G. Stephens
  • I. H. Wilson


Nitrogen bombardment of tantalum thin films is shown to produce large variations in resistivity (p) and temperature coefficient of resistivity (TCR) with ion dose, and electron diffraction shows that these changes are probably due to the formation in the films of Ta2N and TaN. Films were prepared by evaporation in two quite different vacuum systems and by sputter deposition in an argon environment and the amount of oxygen in the as deposited tantalum films seems to play an important part in the magnitude of the variations of p and TCR.

Argon bombardment produces large changes in p with little change of TCR. Electron micropraphs show bubble formation.

Oxygen bombardment produces a similar change in p to that with argon, but the TCR goes increasingly negative with dose.


Thin Solid Film Thin Metal Film Oxygen Bombardment Argon Environment Tantalum Nitride 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • K. H. Goh
    • 1
  • K. G. Stephens
    • 1
  • I. H. Wilson
    • 1
  1. 1.Department of Electronic and Electrical Engineering GuildfordUniversity of SurreySurreyEngland

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