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Ion-Bombardment-Induced Surface Expansion of Solids

  • H. Tanoue
  • T. Tsurushima

Abstract

Surface expanding phenomena in GGG(Gd3Ga5O12) bombarded with various ions have been observed by an interferometer. An expansion model is proposed to explain the phenomena taking into account present and other investigators’ results. The effect of surface expansion on the profile of implanted ions in the substrate is discussed.

Keywords

Surface Elevation Step Height Surface Expansion Proton Bombardment Energy Bombardment 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    J. C. North and R. Wolfe; Ion Implantation in Semiconductors and other materials, Plenum Press, (1973) p.505CrossRefGoogle Scholar
  2. [2]
    R. E. Whan and G. W. Arnold; Appl. Phys. Lett. 17 378 (1970)ADSCrossRefGoogle Scholar
  3. [3]
    Wendland Beezhold; Ion Implantation in Semiconductors, Springer-Verlag, (1971) p.267CrossRefGoogle Scholar
  4. [4]
    K. N. Tu, P. Chaudhari, K. Lal, B. L. Crowdwer and S. I. Tan; J. Appl. Phys. 43 4262 (1972)ADSCrossRefGoogle Scholar
  5. [5]
    T. Tsurushima et al.; Proc. 5-th Conf. on Solid State Devices, Tokyo (1973) p.464Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • H. Tanoue
    • 1
  • T. Tsurushima
    • 1
  1. 1.Electrotechnical LaboratoryTanashi, TokyoJapan

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