ZnS:Mn DC Electroluminescent Cells by Ion Implantation Techniques
New approaches to fabricate ZnS:Mn DC El cells by low-energy ion implantation process which combined with deposition process have been proposed. Mn ions as a activator are implanted during or after deposition of ZnS. By simultaneous or alternative operation of deposition and implantation process, dose distribution of Mn element can be controlled externally by adjusting ion beam current and accelerating voltage. Wide depth distribution of luminescent centers can be controlled by this method with less lattice disorder or def-fect. Usual ZnS:Mn thin film EL cells fabricated by thermal processing show little or no emission under DC excitation without any coactivator. But, the cells by ion implantation have shown strong emission under both DC and AC excitations and low impedance characteristics under DC excitation. The ionized cluster beam deposition method which is new deposition technique proposed by authors using newly designed “Vapourized Metal Cluster Ion Source” may be one of the special case of simultaneous operation of implantation and deposition above mentioned. In the technique, ZnS:Mn vapour aggregate (cluster) is used instead of atomic or molecular ions in ordinal ion implantation techniques. Under DC excitation, these cells showed good luminescence in spite of no coactivators.
KeywordsBeam Deposition Alternative Operation Electron Beam Deposition Good Luminescence Cluster Beam Deposition
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