N-Ion Implantation into ZnSe

  • C. H. Chung
  • H. W. Yoon
  • H. S. Kang
  • C. H. Tai


Low resistivity n-type ZnSe single crystals implanted with 60 keV or 60 and 25 keV N-ions were converted to p-type conductivity after proper annealing. The type conversion was confirmed by a thermal probe method, I–V characteristics and a photovoltaic effect. Photo luminescent and electroluminescent measurements showed the edge emission (2.68 eV), intense green (2.38 eV) and faint red (1.99 eV) bands at 77°K. The green emission quenched out completely at room temperature and only weak red band (l.97 eV) remained. The radiative recombination of the anomalous emission intensity at 77°K can be attributed to the coorperation of the radiative recombination of the implanted nitrogen center (0.09 eV) and the intrinsic edge emission.


Radiative Recombination Green Band Edge Emission Photovoltaic Effect Type Conversion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    J. P. Donnelly, A. G. Foyt, E. D. Hinkley, W. T. Lindley and J. O. Dimmock, Appl. Phys. Lett., 12, 3030 (1968).CrossRefGoogle Scholar
  2. 2.
    F. Chernow, G. Eldridge, G. Ruse and L. Wahlin, Appl. Phys. Lett., 12, 339 (1968).ADSCrossRefGoogle Scholar
  3. 3.
    W. W. Anderson and J. J. Mitchell, Appl. Phys. Lett., 12, 334 (1968).ADSCrossRefGoogle Scholar
  4. 4.
    Y. Shiraki, T. Shimada, and K. F. Komatsubara, J. Appl. Phys., 43, 710 (1972).ADSCrossRefGoogle Scholar
  5. 5.
    S. L. Hou and J. A. Marley, Jr., Appl. Phys. Lett., 16, 467 (1970).ADSCrossRefGoogle Scholar
  6. 6.
    S. L. Hou, K. Beck and J. A. Marley. Jr., Appl. Phys. Lett., 14, 151 (1969).ADSCrossRefGoogle Scholar
  7. 7.
    J. Marine and H. Rodot, Appl. Phys. Lett., 17, 352 (l970).CrossRefGoogle Scholar
  8. 8.
    Y. S. Park and C. H. Chung, Appl. Phys. Lett., 18, 99 (l97l).CrossRefGoogle Scholar
  9. 9.
    Y. S. Park and B. K. Shin, Proceedings of the International Conference on Solid State Devices, Tokyo, 1973, p. 508.Google Scholar
  10. 10.
    C. H. Chung and K. B. Kim, to be published in J. Korea, Phys. Soc, vol. 7, No. 2 (1974).Google Scholar
  11. 11.
    J. J. Santiago, J. E. Ehret, W. R. Woody and Y. S. Park, Proceedings of the International Conference on Ion Implantation, New York, 1972.Google Scholar
  12. 12.
    M. Aven and H. H. Woodbury, Appl. Phys. Lett., 1, 53 (l962).CrossRefGoogle Scholar
  13. 13.
    Y. S. Park, P. M. Hemenger and C. H. Chung, Bull. Am. Phys. Soc. II, 16, 374 (1971).Google Scholar
  14. 14.
    Phil Won Yu (private communication).Google Scholar
  15. 15.
    D. C. Reynolds, L. S. Pedrotti and O. W. Larson. J. Appl. Phys., 32, 3230 (1961).Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • C. H. Chung
    • 1
  • H. W. Yoon
    • 1
  • H. S. Kang
    • 1
  • C. H. Tai
    • 2
  1. 1.Dept. of PhysicsYonsei UniversitySeoulKorea
  2. 2.Dept. of PhysicsEwha Women UniversitySeoulKorea

Personalised recommendations