N-Ion Implantation into ZnSe
Low resistivity n-type ZnSe single crystals implanted with 60 keV or 60 and 25 keV N-ions were converted to p-type conductivity after proper annealing. The type conversion was confirmed by a thermal probe method, I–V characteristics and a photovoltaic effect. Photo luminescent and electroluminescent measurements showed the edge emission (2.68 eV), intense green (2.38 eV) and faint red (1.99 eV) bands at 77°K. The green emission quenched out completely at room temperature and only weak red band (l.97 eV) remained. The radiative recombination of the anomalous emission intensity at 77°K can be attributed to the coorperation of the radiative recombination of the implanted nitrogen center (0.09 eV) and the intrinsic edge emission.
KeywordsRadiative Recombination Green Band Edge Emission Photovoltaic Effect Type Conversion
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