Properties of Aℓ and P Ion-Implanted Layers in ZnSe

  • Y. S. Park
  • B. K. Shin
  • D. C. Look
  • D. L. Downing


Low-resistivity n- and p-type layers have been produced in ZnSe by room-temperature Aℓ and P implantation, respectively, and subsequent annealing. The layers have been characterized by electrical and photoluminescence measurements as functions of ion energy and dose, and annealing time and temperature.


Hall Mobility Edge Emission Band Sheet Resistivity Impurity Conductivity Shallow Acceptor Level 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • Y. S. Park
    • 1
  • B. K. Shin
    • 1
  • D. C. Look
    • 1
  • D. L. Downing
    • 1
  1. 1.Aerospace Research LaboratoriesWright-Patterson Air Force BaseUSA

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