Properties of Aℓ and P Ion-Implanted Layers in ZnSe
Low-resistivity n- and p-type layers have been produced in ZnSe by room-temperature Aℓ and P implantation, respectively, and subsequent annealing. The layers have been characterized by electrical and photoluminescence measurements as functions of ion energy and dose, and annealing time and temperature.
KeywordsHall Mobility Edge Emission Band Sheet Resistivity Impurity Conductivity Shallow Acceptor Level
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