Direct Measurement of Impurity and Damage Distribution in Ion Implanted ZnTe by Cathodo and Photoluminescence
In this paper, we present the luminescence properties of Boron and Aluminium implanted ZnTe. Once implanted and eventually annealed, ZnTe is deepened by Argon ionic sputtering to different depths (down to 2.2 μ). Then cathodoluminescence at 77°K and photoluminescence at 4.2°K are performed on each step. From the spectral distribution and the quantum efficiency measurements, it appears clearly that the effect of implantation is significant far beyond the penetration depth of impurities. On the other hand, annealing at 550oC during 30 minutes is not sufficient to eliminate the created damage. On the contrary, far from the surface, the annealing reduces the quantum efficiency. A model, based on the interaction between damage and luminescent centers associated with implantation, is proposed to explain the behaviour of implanted impurities in II–VI semiconductors.Important conclusions are also inferred in order to improve the external quantum efficiency of ZnTe implanted electroluminescent diodes.
KeywordsQuantum Efficiency External Quantum Efficiency Damage Distribution Zinc Vacancy Phonon Replica
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