Direct Measurement of Impurity and Damage Distribution in Ion Implanted ZnTe by Cathodo and Photoluminescence

  • D. Demars
  • M. Quillec
  • M. Ravetto
  • J. Marine
  • G. Guernet


In this paper, we present the luminescence properties of Boron and Aluminium implanted ZnTe. Once implanted and eventually annealed, ZnTe is deepened by Argon ionic sputtering to different depths (down to 2.2 μ). Then cathodoluminescence at 77°K and photoluminescence at 4.2°K are performed on each step. From the spectral distribution and the quantum efficiency measurements, it appears clearly that the effect of implantation is significant far beyond the penetration depth of impurities. On the other hand, annealing at 550oC during 30 minutes is not sufficient to eliminate the created damage. On the contrary, far from the surface, the annealing reduces the quantum efficiency. A model, based on the interaction between damage and luminescent centers associated with implantation, is proposed to explain the behaviour of implanted impurities in II–VI semiconductors.Important conclusions are also inferred in order to improve the external quantum efficiency of ZnTe implanted electroluminescent diodes.


Quantum Efficiency External Quantum Efficiency Damage Distribution Zinc Vacancy Phonon Replica 


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  1. [1]
    J. Marine, H. Rodot — Appl. Phys. Letters, 17, 352 (1970) European Conference on ion implantation, Reading (1970)ADSCrossRefGoogle Scholar
  2. [2]
    F. Chernow — Private communicationGoogle Scholar
  3. [3]
    J.L. Combasson — Internal notesGoogle Scholar
  4. [4]
    B. Blanchard, N. Hilleret, J.B. Quoirin — J. of Radioanalytical chemistry, 12, 85, (1972)CrossRefGoogle Scholar
  5. [5]
    J.L. Merz, L.C. Feldman — Appl. Phys. Letters, 15, 129, (1969)ADSCrossRefGoogle Scholar
  6. [5a]
    J.L. Merz, L.C. Feldman — Phys. Rev. 176, 961, (1968)ADSCrossRefGoogle Scholar
  7. [6]
    R.E. Halsted, M. Aven, H.D. Coghill — J. of Electrochem. Soc. 112, 177, (1965)CrossRefGoogle Scholar
  8. [7]
    J.M. Meese, Y.S. Park — Conference on defects in semiconductors Reading (1972)Google Scholar
  9. [8]
    F.J. Bryant, A.T.J. Baker — Physica Status Solidi (a), 11, 623 (1972)ADSCrossRefGoogle Scholar
  10. [9]
    H. Rodot, P. Leclerc, N. Hammond — Conference on electronic materials — SAN FRANCISCO (1971)Google Scholar
  11. [10]
    Damage profile is assimilated to the deposited energy profileGoogle Scholar
  12. [11]
    K.B. Winterbon — Rad. Effects, 13, 215 (1972)CrossRefGoogle Scholar
  13. [12]
    A. Bontemps, E. Ligeon, J. Marine, J.C. Pfister — Congrès du Centenaire de la S.F.P. — VITTEL (1973)Google Scholar
  14. [13]
    P.F. Engel, F. Chernow — This conferenceGoogle Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • D. Demars
    • 1
  • M. Quillec
    • 1
  • M. Ravetto
    • 1
  • J. Marine
    • 1
  • G. Guernet
    • 1
  1. 1.L.E.T.I.Centre D’Etudes Nucléaires de GrenobleGrenobleFrance

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