Ion Implantation of as in CdTe: Electrical Characteristics and Radiation Damage
The effects of arsenic and krypton implantations have been investigated in semi-insulating cadmium telluride crystals. Nearly 100 percent electrical activity was observed when As implants were performed at 300°C in samples subjected to a 24-hour 500°C cadmium vapor anneal prior to implantation. A jet thinning technique was utilized to prepare samples for transmission electron microscopy analysis and a number of micrographs obtained. In2Te3 and CdCl2 precipitates were identified in indium and chlorine compensated materials. Implantation damage was also observed in the form of small vacancy loops.
KeywordsDislocation Loop Cadmium Telluride Post Anneal Sheet Resistivity Implantation Damage
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