Skip to main content
SpringerLink
Log in

Influence of Annealing and Radiation Damage on Electrical Carriers Profiles in Phosphorus Implanted Silicon Along the |110| Axis

  • Chapter
Book cover Ion Implantation in Semiconductors

  • 250 Accesses

Abstract

Phosphorus ions at energies of 100, 200 and 300 KeV have been implanted into silicon crystals along the |110| axis. The shape of carriers profiles, as a function of annealing temperature between 100 and 900°C, has been compared with the damage distribution due to the implantation itself and correlation between phosphorus electrical activation and damage has been shown. It seems possible to single out three different regions in the carriers depth distributions with different mechanisms of phosphorus electrical activation.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. F. Cembali, R. Galloni, F. Mousty, R. Rosa, F. Zignani, Rad. Effects, April (1974).

    Google Scholar 

  2. F. Cembali, R. Galloni, F. Zignani, J. Phys. E, Sci. Instrum. (in press).

    Google Scholar 

  3. B.L. Crowder, J.M. Fairfield, J. Electrochem. Soc., 117, 363, (1970).

    Article  Google Scholar 

  4. R.S. Nelson, Proc. European Conf. on Ion Implantat., Reading, England, p.212 (1970).

    Google Scholar 

  5. J.F. Gibbons, Proc. of the IEEE, 9, 1062, (1972).

    Article  Google Scholar 

  6. B.L. Crowder, J. Electrochem. Soc. 118, 943, (1971).

    Article  Google Scholar 

  7. P.D. Goode, M.A. Wilkins, G. Dearnaley, Rad. Effects, 6, 237, (1970).

    Article  ADS  Google Scholar 

  8. J.C. Bourgoin, J.W. Corbett, Phys. Lett. 38A, 135, (1972).

    ADS  Google Scholar 

  9. G.D. Watkins, J.W. Corbett, Phys. Rev. A, 134, 1359, (1964).

    ADS  Google Scholar 

  10. Ph. Glotin, J. de Phys. 29, 926, (1968).

    Article  Google Scholar 

  11. M. Hirata, M. Hirata, M. Saito, J. Phys. Jap. 27, 405 (1969).

    Article  ADS  Google Scholar 

  12. G. Dearnaley, M.A. Wilkins, P.D. Goode, J.H. Freeman, G.A. Gard, Atomic Collision Phenomena in Solids, (North Holland) p.633, (1970)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Laboratorio di Chimica e Tecnologia dei Materiali e dei Componenti per l’Elettronica, C.N.R., Bologna, Italy

    F. Cembali, R. Galloni & R. Lotti

  2. Istituto Chimico, Facoltà di Ingegneria, Università di Bologna, Italy

    F. Zignani

Authors
  1. F. Cembali
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. Galloni
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. Lotti
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. F. Zignani
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan

    Susumu Namba

Rights and permissions

Reprints and permissions

Copyright information

© 1975 Plenum Press, New York

About this chapter

Cite this chapter

Cembali, F., Galloni, R., Lotti, R., Zignani, F. (1975). Influence of Annealing and Radiation Damage on Electrical Carriers Profiles in Phosphorus Implanted Silicon Along the |110| Axis. In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_28

Download citation

  • DOI: https://doi.org/10.1007/978-1-4684-2151-4_28

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-2153-8

  • Online ISBN: 978-1-4684-2151-4

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation