Influence of Annealing and Radiation Damage on Electrical Carriers Profiles in Phosphorus Implanted Silicon Along the |110| Axis

  • F. Cembali
  • R. Galloni
  • R. Lotti
  • F. Zignani


Phosphorus ions at energies of 100, 200 and 300 KeV have been implanted into silicon crystals along the |110| axis. The shape of carriers profiles, as a function of annealing temperature between 100 and 900°C, has been compared with the damage distribution due to the implantation itself and correlation between phosphorus electrical activation and damage has been shown. It seems possible to single out three different regions in the carriers depth distributions with different mechanisms of phosphorus electrical activation.


Radiation Damage Damage Distribution Surface Peak Anodic Oxidation Process Carrier Profile 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • F. Cembali
    • 1
  • R. Galloni
    • 1
  • R. Lotti
    • 1
  • F. Zignani
    • 2
  1. 1.Laboratorio di Chimica e Tecnologia dei Materiali e dei Componenti per l’ElettronicaC.N.R.BolognaItaly
  2. 2.Istituto Chimico, Facoltà di IngegneriaUniversità di BolognaItaly

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