Redistribution of Background Impurities in Silicon Induced by Ion Implantation and Annealing
In previous investigations it was found that ion implantation and annealing caused an initial homogeneous “boron dope of silicon to redistribute. The purpose of this study is to investigate these redistribution effects experimentally in more detail.
For that purpose boron redistributions obtained by different experimental conditions are measured. The implanted ion species, the annealing temperature, the crystal direction of the implanted substrate and the background dope concentration are varied. The redistribution of a phosphorus background was investigated, too.
The redistribution effects observed in the boron and phosphorus background dopes are explained by the an-isotropic properties of a crystal lattice containing implanted ions and defect structures.
KeywordsRedistribution Effect Background Impurity Background Dope Boron Distribution Float Zone Silicon
Unable to display preview. Download preview PDF.