Redistribution of Boron in Silicon Through High Temperature Proton Irradiation

  • P. Baruch
  • J. Monnier
  • B. Blanchard
  • C. Castaing


The irradiation defects are usually assumed to act on impurity diffusion processes through an increase of the effective jump frequency, in a vacancy diffusion mechanism. We have shown that, at least for boron in silicon, the usual enhanced diffusion mechanism is swamped by another interaction mechanism, which causes depletion of impurity in some parts of the crystal, and accumulation elsewhere (1).


Boron Atom Boron Concentration Irradiation Defect Proton Irradiation Substitutional Boron 
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  1. (1).
    P.Baruch, J.Monnier, B.Blanchard, C. Castaing, submitted to Applied Physics Letters.Google Scholar
  2. (2).
    G. D. Watkins, in Radiation Effects in Semiconductors, p.97 (Dunod, Paris, 1965).Google Scholar
  3. (3).
    D. Dieumegard, L. M. Mercandalli, M. Croset, SIMS Meeting of A.N.R.T. (Orsay, 1973; unpublished).Google Scholar
  4. (4).
    W. K. Hofker, H. W. Werner, D. P. Oosthoek, M. A. M. de Greft, Appl. Phys. 2, 265 (1973).ADSCrossRefGoogle Scholar
  5. (5).
    P. Baruch, J. Monnier, B. Blanchard, C. Castaing, communication at the International Conference on Defects in Semiconductors (Freiburg, July 1974), to be published by the Institute of Physics (London).Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • P. Baruch
    • 1
  • J. Monnier
    • 2
  • B. Blanchard
    • 3
  • C. Castaing
    • 1
  1. 1.Groupe de Physique des Solides de l’E.N.S.Paris Cedex 05France
  2. 2.L.E.T.I., Centre d’Etudes Nucléaires de GrenobleGrenoble CedexFrance
  3. 3.S.L.A.G.-E.A.P.C., Centre d’Etudes Nucléaires de GrenobleGrenoble CedexFrance

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