Deviated Gaussian Profiles of Implanted Boron and Deep Levels in Silicon

  • Y. Ohmura
  • K. Koike
  • H. Kobayashi
  • K. Murakami


Deviation from Gaussian profiles for both B and 10B implanted in single crystal Si has been investigated for from 60 to 200 keV using the C-V method. Projected ranges for lighter 10B have been found to be slightly smaller than for B, which is explained as being due to the larger electronic stopping. Near the concentration peak (from the top to ~ 1/e), profiles are fairly symmetric, which leads to the smaller central third moment compared with semi-empirical LSS calculation by Mylroie and Gibbons. Deep hole trap distributions due to 11B and 10B have also been obtained with C-V measurement.


Schottky Barrier Hole Trap Si02 Film Gaussian Profile Projected Range 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • Y. Ohmura
    • 1
  • K. Koike
    • 1
  • H. Kobayashi
    • 1
  • K. Murakami
    • 2
  1. 1.Toshiba R&D CenterKomukai, Saiwai-ku, KawasakiJapan
  2. 2.Toshiba Oita WorksMatsuoka, OitaJapan

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