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Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy

  • W. K. Chu
  • H. Müller
  • J. W. Mayer
  • T. W. Sigmon

Abstract

Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into <111> Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.

Keywords

Liquid Nitrogen Temperature Intermediate Dose Residual Damage Wafer Temperature Arsenic Implant 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    R. S. Payne, R. J. Scavuzzo, K. H. Olson, J. M. Nacci, R. A. Moline, IEEE Trans. E.D. 21 (No. 4) 273 (1974).CrossRefGoogle Scholar
  2. 2.
    F. F. Morehead, Jr. and B. L. Crowder, Proc. First Intern. Conf. on Ion Implant. (Gordon and Breach, 1971).Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • W. K. Chu
    • 1
  • H. Müller
    • 1
  • J. W. Mayer
    • 1
  • T. W. Sigmon
    • 2
  1. 1.California Institute of TechnologyPasadenaUSA
  2. 2.Hewlett-Packard LaboratoriesPalo AltoUSA

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