Advertisement

The Influence of Postprocessing on the Electrical Behavior of Implanted Arsenic Distributions in Silicon

  • H. Ryssel
  • H. Kranz
  • K. Schmid
  • I. Ruge
  • H. S. Rupprecht

Abstract

In this paper the annealing and diffusion behavior of arsenic distributions are investigated. For the annealing of implanted layers two distinct activation energies (0.943 eV and 3.74 eV) have been measured at low implantation doses. At doses which result in the formation of amorphous layers, a single activation energy of 2.75 eV has been measured. Quenching experiments indicate that slow cooling after annealing can increase the electrical activation up to a factor of two. Profiles of arsenic implants after drive-in diffusions and after radiation enhanced diffusion are shown. Whereas the first ones show a large impurity gradient at the leading edge of about 5 × 1024cm-4 a plateau is seen in the second case.

Keywords

Isochronal Annealing Hydrogen Energy Sheet Carrier Concentration Arsenic Distribution Single Activation Energy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. /1/.
    R.B. Fair and G.R. Weber, Appl. Phys. Lett. 44, 273 (1973)CrossRefGoogle Scholar
  2. /2/.
    H. Ryssel, K. Schmid and H. Müller, J. Phys. E.: Sci. Instr. 6, 492 (1973)ADSCrossRefGoogle Scholar
  3. /3/.
    H. Ryssel, H. Rupprecht, and H. Kranz, to be publishedGoogle Scholar
  4. /4/.
    J.W. Mayer, L. Eriksson, and J.A. Davies, Ion Implantation in Semiconductors, Academic Press, New York (1970)Google Scholar
  5. /5/.
    F.N. Schwettmann, Appl. Phys. Lett. 22, 570 (1973)ADSCrossRefGoogle Scholar
  6. /6/.
    F.J. Scavucco, R.S. Payne, K.H. Olson, J.M. Nacci, and R.A. Moline IEEE IEDM, Dec. 1972, WashingtonGoogle Scholar
  7. /7/.
    D.G. Nelson, J.F. Gibbons, and W.S. Johnson, Appl. Phys. Lett. 15, 246 (1969)ADSCrossRefGoogle Scholar
  8. /8/.
    Y. Ohmura, S. Mimura, M. Kanazawa, T. Abe and M. Konaka, Rad. Effects 15, 167 (1972)CrossRefGoogle Scholar
  9. /9/.
    J.F. Ziegler, B.L. Crowder and W.J. Kleinfelder, IBM J. Res. Dev. 15, 452 (1971)CrossRefGoogle Scholar
  10. /10/.
    T. Abe, S. Yamamotu, T. Sakamotu and T. Zhota, Ion Implantation in Semiconductors, Ed. S. Namba, p.121, Jap. Soc. Prom. Sci. 1972Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • H. Ryssel
    • 1
  • H. Kranz
    • 1
  • K. Schmid
    • 1
  • I. Ruge
    • 1
  • H. S. Rupprecht
    • 2
  1. 1.Institut für Festkörpertechnologie8 München 60Germany
  2. 2.IBM, Systems Product Div.East FishkillUSA

Personalised recommendations