The Influence of Postprocessing on the Electrical Behavior of Implanted Arsenic Distributions in Silicon
In this paper the annealing and diffusion behavior of arsenic distributions are investigated. For the annealing of implanted layers two distinct activation energies (0.943 eV and 3.74 eV) have been measured at low implantation doses. At doses which result in the formation of amorphous layers, a single activation energy of 2.75 eV has been measured. Quenching experiments indicate that slow cooling after annealing can increase the electrical activation up to a factor of two. Profiles of arsenic implants after drive-in diffusions and after radiation enhanced diffusion are shown. Whereas the first ones show a large impurity gradient at the leading edge of about 5 × 1024cm-4 a plateau is seen in the second case.
KeywordsIsochronal Annealing Hydrogen Energy Sheet Carrier Concentration Arsenic Distribution Single Activation Energy
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