Atom and Carrier Profiles in As Implanted Si
The annealing behavior of As implanted Si-layers is investigated by measuring the atom concentration profile with radioactive tracer technique and the carrier concentration profile with Hall effect measurements in the same sample. Silicon substrates have been implanted at room temperature with a low (4×1013/cm2) and high (5~ 6×1014/cm2) dose of 75As ions together with radioactive 76As ions at 45keV and subjected to annealing at 500°C and 600°C for 20min. After annealing at 600°C, the carrier concentration profile corresponds closely to the implanted As ion profile. The carrier mobility observed for 600°C annealing is almost the same as that expected for comparably doped bulk silicon, except near the peak region for the high dose implantation. The results suggest that the recovery of the carrier and mobility takes place from inside toward the surface.
KeywordsElectron Spin Resonance Carrier Mobility Peak Region Carrier Recovery Radioactive Tracer Technique
Unable to display preview. Download preview PDF.
- 3).J.M. Fairfield and B.L. Crowder: Trans. Met. Soc. AIME 245 (1969) 469Google Scholar
- 4).M. Iwaki, K. Gamo, K. Masuda, S. Namba, S. Ishihara and I. Kimura: Ion Implantation in Semiconductors and other Materials, ed. by. B.L. Crowder, Prenum Press, New York (1973) p.111Google Scholar
- 5).J. Lindhard, M. Scharff and H.E. Schiott: kgl. Danske Videnskab. Selskab. Mat. Fys. Medd. 33 (1963) 14Google Scholar
- 8).I. Irvin: Bell System Tech. J. 41 (1962) 387Google Scholar