Abstract
A method is described for analyzing implanted semiconductors in which the chemical state of the substrate and impurity atoms is determined from the X-ray photoelectronic spectrum of a narrow surface layer. For the As /Si system, measurements on the As (3d) and Si(2p) lines have established the impurity profile and indicated residual damage after anneal of high dose implants.
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© 1975 Plenum Press, New York
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Ludvik, S., Scharpen, L., Weaver, H.E. (1975). Measurement of Arsenic Implantation Profiles in Silicon Using an Electron Spectroscopic Technique. In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_19
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DOI: https://doi.org/10.1007/978-1-4684-2151-4_19
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-2153-8
Online ISBN: 978-1-4684-2151-4
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