Measurement of Arsenic Implantation Profiles in Silicon Using an Electron Spectroscopic Technique
A method is described for analyzing implanted semiconductors in which the chemical state of the substrate and impurity atoms is determined from the X-ray photoelectronic spectrum of a narrow surface layer. For the As /Si system, measurements on the As (3d) and Si(2p) lines have established the impurity profile and indicated residual damage after anneal of high dose implants.
KeywordsLine Intensity Etch Rate Atomic Line Impurity Profile Substrate Atom
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