Movement of Ions During the Anodic Oxidation of Aluminum

  • W. D. Mackintosh
  • F. Brown


In an extensive series of experiments, we have studied the movement of foreign atoms during the anodic oxidation of aluminum by introducing them into the surface layers of specimens by ion implantation at low energy (20–40 keV) and determining the depths of the implants after oxidation by means of Rutherford back-scattering analysis. Two different situations were investigated; each species was implanted into specimens covered only by natural air-formed oxide (≈ 0.5 µg/cm2 thick) and into specimens covered by a pre-formed oxide 11 µg/cm2 thick. In the former the greater part of the implanted atoms was located in the metal, in the latter they were entirely contained by the oxide layer; see Fig. 1. The depths of the implants after both the air-formed and pre-formed oxide films had been thickened anodically, were determined using a 2 MeV He beam in the manner described in detail in Ref. (1).


Oxide Film Anodic Oxidation Foreign Atom Oxide Front Lower Oxidation Potential 
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    F. Brown and W.D. Mackintosh, J. Electrochem. Soc. 120, 1096 (1973).CrossRefGoogle Scholar
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    J.W. Mayer, L. Eriksson and J.A. Davies, Ion Implantation in Semiconductors, Academic Press, New York (1970).Google Scholar
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Copyright information

© Plenum Press, New York 1974

Authors and Affiliations

  • W. D. Mackintosh
    • 1
  • F. Brown
    • 1
  1. 1.Chalk River Nuclear LaboratoriesAtomic Energy of Canada LimitedChalk RiverCanada

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