The Effects of Ion Bombardment on the Thin Film Oxidation Behavior of Zircaloy-4 and Zr-1.0 Nb
The oxidation rates of Zircaloy-4 and Zr-1.0 Nb in oxygenated water at 360°C were suppressed by prior ion bombardment. 0+, Ar+, and Xe+ accelerated to energies in the 67 to 150 keV range to fluences of 5 x 1013 to 1 x 1016 ions/cm2 provided lattice damage on the order of 10 to 100 dpa. Subsequent autoclave oxidation was used to explore the damage effects on reaction rate. Since annealing accompanied oxidation, several sequential bombardment/ oxidation cycles were performed on each sample. Oxidation of bombarded surfaces was much more uniform than that observed on control samples.
KeywordsOxide Film Oxidation Rate Anion Diffusion Lattice Damage Unirradiated Control
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- 8.N.J. Doyle, J.M. Bogdon, and W.J. Choyke, to be published.Google Scholar
- 9.W.S. Johnson, J.F. Gibbons, Projected Range Statistics in Semiconductors, Stanford University Press, Palo Alto (1969).Google Scholar
- 11.J. Lindhard, M. Scharff, H.E. Schiott, Mat. Fys. Medd. Dan.Vid. Selsk. 33 (1963).Google Scholar
- 12.F.A. Garner, to be published.Google Scholar
- 13.F.A. Garner, personal communication.Google Scholar
- 17.G.P. Sabol, S.G. McDonald, and G.P. Airey, to be published in the Proceedings of the ASTM/AIME Symposium on Zirconium in Nuclear Applications, Portland, Oregon, August 1973.Google Scholar
- 18.J.R. Johnson, Trans. AIME 212, 13 (1958).Google Scholar
- 21.J.W. Mayer, L. Eriksson, and J.A. Davies, Ion Implantation in Semiconductors, Academic Press, New York, 19 (1970).Google Scholar