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The Changes in Electrical Properties of Tantalum Thin Films Following Ion Bombardment

  • I. H. Wilson
  • K. H. Goh
  • K. G. Stephens

Abstract

Tantalum based thin films are currently used as resistors in hybrid integrated circuits because of their excellent stability and reliability. For high accuracy resistors it is required that the thermal coefficient of resistivity (TCR) is very low, whilst for a highly stable RC circuit the TCR must balance the temperature coefficient of capacitance.

Keywords

Dose Dependence Alloy Film Tantalum Oxide Beam Heating Oxygen Bombardment 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1974

Authors and Affiliations

  • I. H. Wilson
    • 1
  • K. H. Goh
    • 1
  • K. G. Stephens
    • 1
  1. 1.Department of Electronic and Electrical EngineeringUniversity of SurreyGuildford, SurreyEngland

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