Ion Implantation in Superconducting Thin Films
Selected ions were implanted at room temperature in thin films of the transition metal superconductors Ti, Zr, V, Nb, Ta, Mo, W and Re, the A-15 compound Nb3Sn and the interstitial compounds NbC and NbN with NaCl structure. Both chemically active and inert ions were used in order to distinguish between radiation damage and other effects influencing the superconducting transition temperature Tc. Successively larger decreases in Tc, due to radiation damage, were obtained for NbC, NbN, Mo, Ta, V, Nb and Nb3Sn in that order. Chemically active ions were found to produce the same reduction in Tc as inert ions in Ta, V, Nb and Nb3Sn, whereas in those materials in which radiation damage is less influential, namely NbC, NbN, Mo, W and Re, Tc enhancement was found to occur and was dose-dependent.
KeywordsRadiation Damage Fermi Edge Superconducting Thin Film Nb3Sn Layer Compound Nb3Sn
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