Radiation Damage and Ion Behaviour in Ion Implanted Vanadium and Nickel Single Crystals
Distributions and annealing behaviour of heavy ion induced radiation damage in single crystal nickel and vanadium are compared. Sharp annealing stages are reported for Ni while for V the production of a polycrystalline layer, ascribed to the action of precipitates, prevented the annealing of damage after high dose implantations. The use of 4He+ ion channelling revealed disorder at depths much greater than the ions projected range, an observation that was supported by electron microscopy measurements. Implanted ion diffusion in vanadium was found to be dependent on the ion species used and the annealing behaviour of precipitates. Preliminary quantitative measurements indicate that diffusion coefficients are low.
KeywordsRadiation Damage Annealing Behaviour Nickel Single Crystal Polycrystalline Layer Backscattering Spectrum
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