Ion Beam Induced Intermixing in the Pd/Si System
MeV He backscattering, scanning electron microscopy and x-ray diffraction analysis were used to investigate the effect of Ar ion bombardment on thin evaporated Pd layers on single crystal Si. Ar ions of energies between 40 and 400 keV were used and the thickness of the Pd films varied between 300 and 1100Å. Back-scattering measurements showed that for cases where the range of the implanted ions was comparable to the Pd film thickness, pronounced intermixing occurred. X-ray diffraction analysis showed that the intermixing resulted in the formation of Pd2Si. The intermixing was found to occur for ion doses > 1016cm-2. No mixing was observed for ion doses < 1015 cm-2 and for film thickness in excess of the ion range. We attribute the intermixing to a dynamic process of beam-enhanced diffusion. It does not appear to be a heating effect and it is also unlikely that the intermixing results from knock-on implantation.
KeywordsRecoil Implantation High Energy Implantation Thin Film Case Backscatter Energy Spectrum Implantation Dose Rate
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