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Analysis of Compound Formation in Au-Al Thin Films

  • S. U. Campisano
  • G. Foti
  • F. Grasso
  • J. W. Mayer
  • E. Rimini

Abstract

Backscattering techniques were used to evaluate intermixing in evaporated thin films of Al and Au. The film thicknesses ranged between 2000 Å and 7000 Å. In the analysis of 2.0 MeV He+ backscattering spectra the gold yield in a virgin sample has been used to normalize the gold concentration in the reacted sample. The aluminum component in the spectra gives the complementary concentration, but counting statistics are poor and background corrections must be made. At temperatures around 100 C the backscattering spectra show that the compound Au2Al forms at the interface between Au and Al. The growth of the compound is proportional to the square root of the annealing time. At temperatures around 200 C the backscattering spectra show that the compound AuAl2 forms and grows proportional to the square root of the annealing time.

Keywords

Gold Concentration Bulk Gold Copper Gold Aluminum Component Virgin Sample 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1974

Authors and Affiliations

  • S. U. Campisano
    • 1
  • G. Foti
    • 1
  • F. Grasso
    • 1
  • J. W. Mayer
    • 1
  • E. Rimini
    • 1
  1. 1.Istituto di Struttura della Materiadell’Università Corso ItaliaCataniaItaly

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