The Depth Distribution of Phosphorus Ions Implanted into Silicon Crystals
Ion implantation of phosphorus into misaligned silicon crystals leads to a deep penetrating tail in the range distribution, due possibly to scattering into channels or to an anomalous diffusion process. Experiments have been carried out to test the various diffusion mechanisms so far proposed. It is shown that none of them accounts satisfactorily for the tail, which develops during the implantation process and is not thermally activated. A channelling mechanism is therefore favoured as the cause of the tail.
KeywordsSilicon Crystal Minority Carrier Lifetime Fermi Level Position Radioactive Phosphorus Epitaxial Regrowth
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