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The Depth Distribution of Phosphorus Ions Implanted into Silicon Crystals

  • P. Blood
  • G. Dearnaley
  • M. A. Wilkins
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

Ion implantation of phosphorus into misaligned silicon crystals leads to a deep penetrating tail in the range distribution, due possibly to scattering into channels or to an anomalous diffusion process. Experiments have been carried out to test the various diffusion mechanisms so far proposed. It is shown that none of them accounts satisfactorily for the tail, which develops during the implantation process and is not thermally activated. A channelling mechanism is therefore favoured as the cause of the tail.

Keywords

Silicon Crystal Minority Carrier Lifetime Fermi Level Position Radioactive Phosphorus Epitaxial Regrowth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • P. Blood
    • 1
  • G. Dearnaley
    • 2
  • M. A. Wilkins
    • 2
  1. 1.Mullard Research LaboratoriesRedhill, SurreyEngland
  2. 2.Nuclear Physics DivisionAEREHarwell, BerksEngland

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