Properties of Tellurium Implanted Gallium Arsenide
Hall effect and Rutherford backscattering measurements were used to study the electrical properties, the lattice location, and the resulting lattice damage of tellurium implanted in GaAs. Ion implantation was performed with substrates held at elevated temperatures (150°–350°C) to avoid the production of an amorphous layer. After implantation, a protective coating of Si3N4. was reactively sputtered on all samples to keep the GaAs from disassociating during anneal. The best results were obtained with samples annealed at 900°C. Up to 50% electrical activity was attained with mobilities consistent with bulk values. Differential Hall effect measurements performed on a sample implanted with 1 × 1014 Te/cm2 indicated that the peak electron concentration was about 8 × 1018 electrons/cm3 and that no movement of the Te profile had occurred during anneal. Such peak electron levels are in accordance with the maximum value of the electron concentration attained in tellurium doped GaAs (~1019 electrons/cm3).
KeywordsGallium Arsenide Amorphous Layer GaAs Sample Si3N4 Layer High Electrical Activity
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