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Compensation of GaAs by Oxygen Implantation

  • P. N. Favennec
  • G. P. Pelous
  • M. Binet
  • P. Baudet
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

Oxygen implantations are found to produce semi-insulating layers, buried or not, according to the energy and the dose, and temperature resistant, up to 800°C. These semi-insulating layers are attributed to doping properties of oxygen; and we have found each oxygen ion removes two carriers. The layer, which the ions pass through, is not too much disturbed.

Keywords

Carrier Concentration Oxygen Dose Deplete Layer Thickness Implantation Parameter Oxygen Implantation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • P. N. Favennec
    • 1
  • G. P. Pelous
    • 1
  • M. Binet
    • 2
  • P. Baudet
    • 2
  1. 1.Departement PMTCentre National d’Etudes des TelecommunicationsLannionFrance
  2. 2.Laboratoire d’Electronique et de Physique AppliqueeLimeil BrevannesFrance

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