Compensation of GaAs by Oxygen Implantation
Oxygen implantations are found to produce semi-insulating layers, buried or not, according to the energy and the dose, and temperature resistant, up to 800°C. These semi-insulating layers are attributed to doping properties of oxygen; and we have found each oxygen ion removes two carriers. The layer, which the ions pass through, is not too much disturbed.
KeywordsCarrier Concentration Oxygen Dose Deplete Layer Thickness Implantation Parameter Oxygen Implantation
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